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BAV70 series
High-speed switching diodes
Rev. 07 -- 27 November 2007 Product data sheet
1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages.
Table 1. Product overview Package NXP BAV70 BAV70M BAV70S BAV70T BAV70W SOT23 SOT883 SOT363 SOT416 SOT323 JEITA SC-101 SC-88 SC-75 SC-70 JEDEC Package configuration Configuration dual common cathode dual common cathode quadruple common cathode/common cathode dual common cathode dual common cathode
Type number
TO-236AB small leadless ultra small very small ultra small very small
1.2 Features
I High switching speed: trr 4 ns I Low leakage current I Small SMD plastic packages I Low capacitance: Cd 1.5 pF I Reverse voltage: VR 100 V
1.3 Applications
I High-speed switching I General-purpose switching
1.4 Quick reference data
Table 2. Symbol Per diode IR VR trr
[1]
Quick reference data Parameter reverse current reverse voltage reverse recovery time
[1]
Conditions VR = 80 V
Min -
Typ -
Max 0.5 100 4
Unit A V ns
When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.
NXP Semiconductors
BAV70 series
High-speed switching diodes
2. Pinning information
Table 3. Pin 1 2 3 Pinning Description anode (diode 1) anode (diode 2) common cathode
1 2
006aaa144
Simplified outline
Symbol
BAV70; BAV70T; BAV70W
3 1
006aab034
3 2
BAV70M 1 2 3 anode (diode 1) anode (diode 2) common cathode
1 3 2 Transparent top view 1
006aab034
3 2
BAV70S 1 2 3 4 5 6 anode (diode 1) anode (diode 2) common cathode (diode 3 and diode 4) anode (diode 3) anode (diode 4) common cathode (diode 1 and diode 2)
1 2 3 1 2 3
006aab104
6
5
4
6
5
4
3. Ordering information
Table 4. Ordering information Package Name BAV70 BAV70M BAV70S BAV70T BAV70W SC-101 SC-88 SC-75 SC-70 Description plastic surface-mounted package; 3 leads leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm plastic surface-mounted package; 6 leads plastic surface-mounted package; 3 leads plastic surface-mounted package; 3 leads Version SOT23 SOT883 SOT363 SOT416 SOT323 Type number
BAV70_SER_7
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 -- 27 November 2007
2 of 15
NXP Semiconductors
BAV70 series
High-speed switching diodes
4. Marking
Table 5. BAV70 BAV70M BAV70S BAV70T BAV70W
[1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
Marking codes Marking code[1] A4* S4 A4* A4 A4*
Type number
5. Limiting values
Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per diode VRRM VR IF repetitive peak reverse voltage reverse voltage forward current BAV70 BAV70M BAV70S BAV70T BAV70W IFRM repetitive peak forward current BAV70 BAV70M BAV70S BAV70T BAV70W IFSM non-repetitive peak forward square wave current tp = 1 s tp = 1 ms tp = 1 s
[1]
Parameter
Conditions
Min -
Max 100 100 215 150 250 150 175
Unit V V mA mA mA mA mA
Tamb 25 C Ts = 90 C Ts = 60 C Ts = 90 C Tamb 25 C
-
-
450 500 450 500 500 4 1 0.5
mA mA mA mA mA A A A
BAV70_SER_7
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 -- 27 November 2007
3 of 15
NXP Semiconductors
BAV70 series
High-speed switching diodes
Table 6. Limiting values ...continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Ptot Parameter total power dissipation BAV70 BAV70M BAV70S BAV70T BAV70W Per device IF forward current BAV70 BAV70M BAV70S BAV70T BAV70W Tj Tamb Tstg
[1] [2] [3]
Conditions
[2]
Min [3]
Max 250 250 350 170 200
Unit mW mW mW mW mW
Tamb 25 C Tamb 25 C Ts = 60 C Ts = 90 C Tamb 25 C
-
Tamb 25 C Ts = 90 C Ts = 60 C Ts = 90 C Tamb 25 C
-65 -65
125 75 100 75 100 150 +150 +150
mA mA mA mA mA C C C
junction temperature ambient temperature storage temperature
Tj = 25 C prior to surge.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
Table 7. Symbol Per diode Rth(j-a) thermal resistance from junction to ambient BAV70 BAV70M BAV70W Rth(j-t) thermal resistance from junction to tie-point BAV70 BAV70W Rth(j-sp) thermal resistance from junction to solder point BAV70S BAV70T
[1] [2]
BAV70_SER_7
Thermal characteristics Parameter Conditions in free air
[1]
Min
Typ
Max
Unit
[2]
-
500 500 625
K/W K/W K/W
-
-
-
360 300
K/W K/W
-
-
255 350
K/W K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Reflow soldering is the only recommended soldering method.
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 -- 27 November 2007
4 of 15
NXP Semiconductors
BAV70 series
High-speed switching diodes
7. Characteristics
Table 8. Characteristics Tamb = 25 C unless otherwise specified. Symbol Per diode VF forward voltage IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA IR reverse current VR = 25 V VR = 80 V VR = 25 V; Tj = 150 C VR = 80 V; Tj = 150 C Cd trr VFR
[1] [2] [3]
[1]
Parameter
Conditions
Min
Typ
Max
Unit
[2] [3]
-
715 855 1 1.25 30 0.5 30 100 1.5 4 1.75
mV mV V V nA A A A pF ns V
diode capacitance reverse recovery time forward recovery voltage
Pulse test: tp 300 s; 0.02.
VR = 0 V; f = 1 MHz
-
When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA. When switched from IF = 10 mA; tr = 20 ns.
BAV70_SER_7
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 -- 27 November 2007
5 of 15
NXP Semiconductors
BAV70 series
High-speed switching diodes
103 IF (mA) 102
006aab107
102 IFSM (A) 10
mbg704
10
1
(1) (2) (3) (4)
1
10-1 0.2
10-1 0.6 1.0 VF (V) 1.4 1 10
102
103 tp (s)
104
(1) Tamb = 150 C (2) Tamb = 85 C (3) Tamb = 25 C (4) Tamb = -40 C
Based on square wave currents. Tj = 25 C; prior to surge
Fig 1. Forward current as a function of forward voltage; typical values
102 IR (A) 10 1 10-1 10-2 10-3 10-4 10-5 0 20 40 60 80 VR (V) 100
(3)
Fig 2. Non-repetitive peak forward current as a function of pulse duration; maximum values
mbg446
006aab108
(1)
0.8 Cd (pF) 0.6
(2)
0.4
0.2
(4)
0 0 4 8 12 VR (V) 16
(1) Tamb = 150 C (2) Tamb = 85 C (3) Tamb = 25 C (4) Tamb = -40 C
f = 1 MHz; Tamb = 25 C
Fig 3. Reverse current as a function of reverse voltage; typical values
Fig 4. Diode capacitance as a function of reverse voltage; typical values
BAV70_SER_7
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 -- 27 November 2007
6 of 15
NXP Semiconductors
BAV70 series
High-speed switching diodes
8. Test information
tr D.U.T. RS = 50 V = VR + IF x RS IF SAMPLING OSCILLOSCOPE Ri = 50 VR
mga881
tp t
10 % + IF trr t
90 % input signal output signal
(1)
(1) IR = 1 mA Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle = 0.05 Oscilloscope: rise time tr = 0.35 ns
Fig 5. Reverse recovery time test circuit and waveforms
I 1 k 450
I
90 %
V
RS = 50 D.U.T.
OSCILLOSCOPE Ri = 50 10 % t tr tp input signal
VFR
t output signal
mga882
Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp 100 ns; duty cycle 0.005
Fig 6. Forward recovery voltage test circuit and waveforms
BAV70_SER_7
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 -- 27 November 2007
7 of 15
NXP Semiconductors
BAV70 series
High-speed switching diodes
9. Package outline
0.62 0.55 0.55 0.47 0.30 0.22 3
3.0 2.8
3
1.1 0.9
0.50 0.46
0.45 0.15 2.5 1.4 2.1 1.2
0.65 0.30 0.22 0.48 0.38 0.15 0.09 04-11-04 0.20 0.12 0.35 Dimensions in mm
1.02 0.95
1
2
2
1
1.9 Dimensions in mm
03-04-03
Fig 7. Package outline BAV70 (SOT23/TO-236AB)
2.2 1.8 6 5 4 0.45 0.15 1.1 0.8
Fig 8. Package outline BAV70M (SOT883/SC-101)
1.8 1.4 3 0.45 0.15
0.95 0.60
2.2 1.35 2.0 1.15
pin 1 index
1.75 0.9 1.45 0.7
1 0.65 1.3 Dimensions in mm
2
3 0.3 0.2 0.25 0.10
1
2 0.30 0.15 1 0.25 0.10 04-11-04
06-03-16
Dimensions in mm
Fig 9. Package outline BAV70S (SOT363/SC-88)
Fig 10. Package outline BAV70T (SOT416/SC-75)
2.2 1.8 3 0.45 0.15
1.1 0.8
2.2 1.35 2.0 1.15
1
2 0.4 0.3 1.3 0.25 0.10 04-11-04
Dimensions in mm
Fig 11. Package outline BAV70W (SOT323/SC-70)
BAV70_SER_7
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 -- 27 November 2007
8 of 15
NXP Semiconductors
BAV70 series
High-speed switching diodes
10. Packing information
Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number BAV70 BAV70M BAV70S BAV70T BAV70W
[1] [2] [3]
Package SOT23 SOT883 SOT363 SOT416 SOT323
Description 4 mm pitch, 8 mm tape and reel 2 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel; T1 4 mm pitch, 8 mm tape and reel; T2 4 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel
[2] [3]
Packing quantity 3000 -215 -115 -125 -115 -115 10000 -235 -315 -135 -165 -135 -135
For further information and the availability of packing methods, see Section 14. T1: normal taping T2: reverse taping
11. Soldering
2.90 2.50
0.85 3.00 0.85 1.30
2
1
solder lands
2.70
3
solder resist
solder paste
occupied area
0.60 (3x)
Dimensions in mm
0.50 (3x) 0.60 (3x) 1.00 3.30
sot023
Fig 12. Reflow soldering footprint BAV70 (SOT23/TO-236AB)
BAV70_SER_7
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 -- 27 November 2007
9 of 15
NXP Semiconductors
BAV70 series
High-speed switching diodes
3.40 1.20 (2x)
solder lands solder resist occupied area
2 1 3
4.60 4.00 1.20
Dimensions in mm 2.80 4.50
preferred transport direction during soldering
sot023
Fig 13. Wave soldering footprint BAV70 (SOT23/TO-236AB)
1.30 R = 0.05 (12x) 0.30 R = 0.05 (12x)
0.35 (2x) 0.90 0.20 0.25 (2x) 0.60 0.70 0.80
0.30 (2x) 0.40 (2x) 0.50 (2x)
0.30 0.40 0.50
solder lands solder paste
solder resist occupied area
Dimensions in mm
Reflow soldering is the only recommended soldering method.
Fig 14. Reflow soldering footprint BAV70M (SOT883/SC-101)
BAV70_SER_7
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 -- 27 November 2007
10 of 15
NXP Semiconductors
BAV70 series
High-speed switching diodes
2.65
0.60 (2x)
2.35 solder lands solder paste solder resist occupied area Dimensions in mm
0.50 (4x) 0.50 (4x)
0.40 0.90 2.10 (2x)
1.20 2.40
sot363
Fig 15. Reflow soldering footprint BAV70S (SOT363/SC-88)
5.25
4.50
0.30 1.00 4.00
solder lands solder resist occupied area 1.15 3.75 transport direction during soldering
sot363
Dimensions in mm
Fig 16. Wave soldering footprint BAV70S (SOT363/SC-88)
BAV70_SER_7
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 -- 27 November 2007
11 of 15
NXP Semiconductors
BAV70 series
High-speed switching diodes
2.2 0.6 0.7 1.1
2 2.0 0.85 3 1 0.5 (3x) 1.5
0.6 (3x) 1.9 Dimensions in mm
solder lands solder resist
msa438
solder paste occupied area
Fig 17. Reflow soldering footprint BAV70T (SOT416/SC-75)
2.65 0.75 1.325 1.30 solder lands
2
solder paste 0.60 2.35 0.85 (3x)
3
0.50 (3x) 1.90
1
solder resist occupied area Dimensions in mm
0.55 (3x)
2.40
msa429
Fig 18. Reflow soldering footprint BAV70W (SOT323/SC-70)
4.60 4.00 1.15
2
3.65
2.10
3
2.70 solder lands
1
0.90 (2x)
solder resist occupied area Dimensions in mm
preferred transport direction during soldering
msa419
Fig 19. Wave soldering footprint BAV70W (SOT323/SC-70)
BAV70_SER_7
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 -- 27 November 2007
12 of 15
NXP Semiconductors
BAV70 series
High-speed switching diodes
12. Revision history
Table 10. Revision history Release date 20071127 Data sheet status Product data sheet Change notice Supersedes BAV70_6 BAV70S_2 BAV70T_3 BAV70W_6 Document ID BAV70_SER_7
Modifications:
* * * * * * * * * * * * * * * * *
The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Type number BAV70M added Section 1.1 "General description": amended Table 1 "Product overview": added Table 2 "Quick reference data": added Table 6 "Limiting values": for BAV70, BAV70S and BAV70W change of VRRM maximum value from 85 V to 100 V Table 6 "Limiting values": for BAV70, BAV70S and BAV70W change of VR maximum value from 75 V to 100 V Table 8 "Characteristics": for BAV70, BAV70S, BAV70T and BAV70W change of IR condition VR from 75 V to 80 V for Tj = 25 C Table 8 "Characteristics": for BAV70, BAV70S and BAV70W change of IR maximum value from 2.5 A to 0.5 A for Tj = 25 C Table 8 "Characteristics": for BAV70T change of IR maximum value from 2.0 A to 0.5 A for Tj = 25 C Table 8 "Characteristics": for BAV70, BAV70S, BAV70T and BAV70W change of IR maximum value from 60 A to 30 A for IR condition VR = 25 V; Tj = 150 C Table 8 "Characteristics": for BAV70, BAV70S, BAV70T and BAV70W change of IR condition VR from 75 V to 80 V for Tj = 150 C Section 8 "Test information": added Section 10 "Packing information": added Section 11 "Soldering": added Section 13 "Legal information": updated Product specification Product specification Product specification Product specification BAV70_5 BAV70S_1 BAV70T_2 BAV70W_5
BAV70_6 BAV70S_2 BAV70T_3 BAV70W_6
20020403 19971021 20040204 20020405
BAV70_SER_7
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 -- 27 November 2007
13 of 15
NXP Semiconductors
BAV70 series
High-speed switching diodes
13. Legal information
13.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
13.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
14. Contact information
For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com
BAV70_SER_7
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 -- 27 November 2007
14 of 15
NXP Semiconductors
BAV70 series
High-speed switching diodes
15. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information. . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 27 November 2007 Document identifier: BAV70_SER_7

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